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Silicon Carbide Ceramic Substrates (SiC)

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Silicon Carbide Ceramic Substrates (SiC)

Silicon Carbide Ceramic Substrates (SiC)
Silicon Carbide Ceramic Substrates (SiC)

Duży Obraz :  Silicon Carbide Ceramic Substrates (SiC)

Szczegóły Produktu:
Miejsce pochodzenia: Chiny
Nazwa handlowa: ZG
Orzecznictwo: CE
Numer modelu: SM
Zapłata:
Minimalne zamówienie: 1 szt
Cena: 10USD/PC
Szczegóły pakowania: Mocne drewniane pudełko do wysyłki globalnej
Czas dostawy: 5-8 dni roboczych
Zasady płatności: L/C, D/A, D/P, T/T, Western Union, MoneyGram
Możliwość Supply: 1000 szt

Silicon Carbide Ceramic Substrates (SiC)

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silicon carbide ceramic substrates

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SiC ceramic substrates for electronics

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high thermal conductivity SiC substrates

Silicon Carbide Ceramic Substrates (SiC)

 

Silicon carbide is a material with high hardness, durability and the ability to work at elevated temperatures (up to 600 C). In addition, it has high electrical strength and a large band gap (greater than that of pure silicon). This material is used both to increase the wear resistance of moving elements and as an armor material.

 

 

Specifications

Properties

Type of SiC

SiSiC (Reaction Bonded Silicon Carbide)

SSiC (Direct Sintered Silicon Carbide

Colour

Black

Blsck

Bulk density

г/см3

≥ 3,02

≥ 3,10

Flexural strength

МПа

≥ 250

≥ 400

Modulus of elasticity

ГПа

≥ 300

≥ 420

Coefficient of thermal expansion

10-6 /°C

4,5

4,1

Thermal conductivity

Вт/м∙K

45

74

Heat shock resistance

°C

400

300

Maximum operating temperature

°C

1380

1600

Application area

  • high-voltage schottky diodes;
  • n-mosfet transistors
  • thyristors;
  • creating LEDs;
  • armor plates;
  • creation of strengthening and wear-resistant elements;
  • abrasive materials.

Szczegóły kontaktu
HENAN ZG INDUSTRIAL PRODUCTS CO.,LTD

Osoba kontaktowa: Daniel

Tel: 18003718225

Faks: 86-0371-6572-0196

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